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UNISONIC TECHNOLOGIES CO., LTD MMBT3904
GENERAL PURPOSE APPLIATION
FEATURES
* Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906
NPN SILICON TRANSISTOR
*Pb-free plating product number: MMBT3904L
ORDERING INFORMATION
Order Number www..com Package Normal Lead Free Plating MMBT3904-AE3-R MMBT3904L-AE3-R SOT-23 MMBT3904-AL3-R MMBT3904L-AL3-R SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel
MMBT3904L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323 (3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector Cut-off Current ICEX VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V Collector-base breakdown voltage VCBO IC=10A, IE=0 Collector-emitter breakdown voltage (note) VCEO IC=1mA, IB=0 Emitter-base breakdown voltage VEBO IE=10A, IC=0 hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA DC current gain (note) hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=50mA hFE5 VCE=1V, IC=100mA VCE(SAT)1 IC=10mA, IB=1mA Collector-emitter saturation voltage (note) VCE(SAT)2 IC=50mA, IB=5mA Base-emitter saturation voltage (note) Current gain bandwidth product Output Capacitance Turn on time VBE(SAT)1 VBE(SAT)2 fT Cob tON MIN TYP MAX UNIT 50 nA 50 nA 60 V 40 V 6 V 40 70 100 300 60 30 0.2 V 0.3 0.85 0.95 4 70 250 V V V MHz pF ns ns
Turn off time tOFF Note: Pulse test: PW<=300s, Duty Cycle<=2%
IC=10mA, IB=1mA 0.65 IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz 300 VCB=5V, IE=0, f=1MHz VCC=3V, VBE=0.5V, IC=10mA, IB1=1mA IB1=1B2=1mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Saturation voltage, VBE(SAT), VCE(SAT) (V)
Base-emitter saturation voltage Collector-emitter saturation voltage 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 0.5 1 VCE(SAT) IC=10 IB Capacitance, Cob (pF) VBE(SAT) 6 5 4 3 2 1 3 5 10 3050 100 0 1 3
Output capacitance
IE=0 f=1MHz
5
10
30 50 100
Collector current, IC(mA)
Collector-base voltage, VCB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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